number: db-030 oct. 2011 / f page 1 semiconductor tak cheong ? 1.3 watt do-41 hermetically sealed glass zener voltage regulators absolute maximum ratings t a = 25c unless otherwise noted parameter value units power dissipation 1.3 w storage temperature range -65 to +200 c operating junction temperature +200 c these ratings are limiting values above which the serviceability of the diode may be impaired. specification features: ? zener voltage range 3.3 to 56 volts ? through-hole device type mounting ? hermetically sealed glass ? compression bonded construction ? all external surfaces are corrosion resistant and leads are readily solderable ? solder hot dip tin (sn) terminal finish ? cathode indicated by polarity band ordering information device description electrical characteristic tcbzx85c3v3 through tcbzx85c56 ? rohs compliant tcbzx85c3v3hf through tcbzx85c56hf ? rohs compliant ? halogen free both are compliant with below electrical characteristics electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type v z min v z max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( a) max v r (volts) tcbzx85c 3v3 3.1 3.5 80 20 1 400 40 1 tcbzx85c 3v6 3.4 3.8 60 20 1 500 20 1 tcbzx85c 3v9 3.7 4.1 60 15 1 500 20 1 tcbzx85c 4v3 4.0 4.6 50 13 1 500 3 1 tcbzx85c 4v7 4.4 5.0 45 13 1 500 3 1 tcbzx85c 5v1 4.8 5.4 45 10 1 500 1 1.5 tcbzx85c 5v6 5.2 6.0 45 7 1 400 1 2 tcbzx85c 6v2 5.8 6.6 35 4 1 300 1 3 tcbzx85c 6v8 6.4 7.2 35 3.5 1 300 1 4 tcbzx85c 7v5 7.0 7.9 35 3 0.5 200 1 4.5 tcbzx85c 8v2 7.7 8.7 25 5 0.5 200 1 6.2 tcbzx85c3v3 through tcbzx85c56 cathode anode electrical symbol axial lead do41 l 85c xxx device marking diagram l : logo device code : tcbzx85c3v3
number: db-030 oct. 2011 / f page 2 semiconductor tak cheong ? electrical characteristics t a = 25c unless otherwise noted v z @ i zt (volts) device type v z min v z max i zt (ma) z zt @ i zt ( ? ) max i zk (ma) z zk @ i zk ( ? ) max i r @ v r ( a) max v r (volts) tcbzx85c 9v1 8.5 9.6 25 5 0.5 200 1 6.9 tcbzx85c 10 9.4 10.6 25 7 0.5 200 0.5 7.5 tcbzx85c 11 10.4 11.6 20 8 0.5 300 0.5 8.2 tcbzx85c 12 11.4 12.7 20 9 0.5 350 0.5 9.1 tcbzx85c 13 12.4 14.1 20 10 0.5 400 0.5 10 tcbzx85c 15 13.8 15.6 15 15 0.5 500 0.5 11 tcbzx85c 16 15.3 17.1 15 15 0.5 500 0.5 12 tcbzx85c 18 16.8 19.1 15 20 0.5 500 0.5 13 tcbzx85c 20 18.8 21.2 10 24 0.5 600 0.5 15 tcbzx85c 22 20.8 23.3 10 25 0.5 600 0.5 16 tcbzx85c 24 22.8 25.6 10 25 0.5 600 0.5 18 tcbzx85c 27 25.1 28.9 8 30 0.25 750 0.5 20 tcbzx85c 30 28 32 8 30 0.25 1000 0.5 22 tcbzx85c 33 31 35 8 35 0.25 1000 0.5 24 tcbzx85c 36 34 38 8 40 0.25 1000 0.5 25 tcbzx85c 39 37 41 6 45 0.25 1000 0.5 27 tcbzx85c 43 40 46 6 50 0.25 1000 0.5 30 tcbzx85c 47 44 50 4 90 0.25 1500 0.5 33 tcbzx85c 51 48 54 4 115 0.25 1500 0.5 36 tcbzx85c 56 52 60 4 120 0.25 2000 0.5 39 v f forward voltage = 1.2 v maximum @ i f = 200 ma for all types notes: 1. tolerance and type number designation (v z ) the type numbers listed have zener voltage min/max limits as shown. 2. specials available include nominal zener voltages between the voltages shown and tighter voltage, for detailed information on price, availability and deli very, contact you nearest tak cheong representative. 3. zener voltage (v z ) measurement the zener voltage ( v z ) is tested under pulse conditions such that t j is no more than 2 above t a . 4. zener impedance (z z ) derivation the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk.
number: db-030 oct. 2011 / f page 3 semiconductor tak cheong ? typical characteristics ta = 25 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 vf - forward voltage [v] forward current [ma] ta = 25 0.1 1 10 100 1000 03691215 vz - reverse voltage [v] reverse current [ma] ta = 25 0.01 0.1 1 10 100 10 20 30 40 50 60 70 vz - reverse voltage [v] reverse current [ma] ta = 25 0.1 1 10 100 1000 0 102030405060 vz - reverse voltage [v] differential zener impedance [ ? ] iz=10ma iz=5ma iz=2ma iz=1ma f = 1mhz ta = 25 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 55 60 vz - reverse voltage [v] total capacitance [pf] vr = 0v vr = 2v vr = 5v vr = 20v vr = 30v 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140 160 180 200 temperature [ ] pd-power passipation [w] figure 1. power dissipation vs ambient temperature valid provided leads at a distance of 0.8mm from case are kept at ambient temperature figure 2. total capacitance figure 5. reverse current vs. reverse voltage figure 6. reverse current vs. reverse voltage figure 3. differential impedance vs. zener voltage figure 4. forward current vs. forward voltage
number: db-030 oct. 2011 / f page 4 semiconductor tak cheong ? package outline package case outline do-41 d0-41 millimeters inches dim min max min max a 0.68 0.81 0.027 0.032 b 3.70 4.25 0.146 0.167 c 25.40 --- 1.000 --- d 2.10 2.60 0.083 0.102 notes: 1. do41 polarity denoted by cathode band.
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